Hynix 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Speed_DDR2-667 5V Technology DDR3L Error Correction

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration 256x8 Pieces in Kit 2 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1066 MT/s 240-pin RDIMM RAM module from Samsung

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Hynix 4GB (1x 4GB) CL7 DDR3L-1066 PC3L-8500 1.35V / 1.5V 204-pin SODIMM RAM Module Speed_DDR2-667 5V Technology DDR3L Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3L 1066 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1066 MT s with an overall transfer rate of PC3L 8500. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.