Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Form Factor_204-pin SODIMM x8 configuration RAM module is

x8 configuration RAM module is for use in DDR2 compatible systems and operates at 800 MT/s with an overall transfer rate of PC2-6400

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 36-chip 512Mx4 Pieces in Kit 1 Compatibility

2xM378B5173EB0-YK0 Capacity 8GB (2x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 512Mx8 Pieces in Kit 1 Compatibility

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility

Micron 8GB (1x 8GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Form Factor_204-pin SODIMM x8 configuration RAM module isProduct Overview This 8GB (1x 8GB) DDR3 1600 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.