Samsung 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-1x-dr 5V Technology DDR3 Error Correction

5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Quad rank Configuration x8 Pieces in Kit 2 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT/s 240-pin RDIMM RAM module from Micron

but the effective rate is 800 megatransfers per second (MT/s) because there are 400 million rising edges per second and 400 million falling edges per second of a clock signal running at 400 MHz

x16 configuration RAM kit from Hynix is for use in DDR2 compatible systems and operates at 533 MT/s with an overall transfer rate of PC2-4200

2xMTA18ASF2G72AZ-2G1A1 Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

Samsung 2GB (1x 2GB) CL7 DDR3-1066 PC3-8500 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-rdimm-16gb-1x-dr 5V Technology DDR3 Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL7, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.