Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-lrdimm-32gb-1x M378B5273CH0-CH9 Capacity 4GB (1x 4GB)

M378B5273CH0-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

2xCT51272AF667 Capacity 8GB (2x 4GB) Brand Crucial Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

8V Technology DDR2 Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

2xM393B4G70BM0-YH9 Capacity 64GB (2x 32GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM CAS Latency CL17 Pieces in Kit 1 Compatibility

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-lrdimm-32gb-1x M378B5273CH0-CH9 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.