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2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Pieces in Kit 1 Compatibility
This 8GB (2x 4GB) DDR3L 1600 MT/s Dual rank
This RAM kit also operates at a standard voltage of 1
2xM471B2873EH1-CF8 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2666 MT/s 288-pin EUDIMM RAM module from Samsung
Hynix 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr4-2133-rdimm-32gb-2x-dr 2V Technology DDR4 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Hynix . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to
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