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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration 2048M x8 Pieces in Kit 2 Compatibility
This 8GB (1x 8GB) DDR3 1600 MT/s Dual rank
Fitted Pouch - flexible plastic tool roll to keep your spudgers at the ready
2xM393A4K40BB2-CTD Capacity 64GB (2x 32GB) Brand Samsung Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1
Hynix 8GB (1x 8GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V ECC 240-pin EUDIMM RAM Module Classification_ram-ddr4-2400-ecc-sodimm-16gb-1x-dr-fm 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3L 1600 MT s 240 pin EUDIMM RAM module from Hynix . This RAM module is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is
