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5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
CT2K8G3S186DM Capacity 16GB (2x 8GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2400 MT/s 260-pin SODIMM RAM module from Crucial
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2133 MT/s 288-pin EUDIMM RAM kit from Crucial
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2133 MT/s 288-pin RDIMM RAM kit from Crucial
Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation 5V Technology DDR3 Error CorrectionProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
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