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but the effective rate is 2400 megatransfers per second (MT/s) because there are 1200 million rising edges per second and 1200 million falling edges per second of a clock signal running at 1200 MHz
M393B2G70EB0-YK0 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
M386A8K40CM2-CVF Capacity 64GB (1x 64GB) Brand Samsung Speed DDR4-2933 - 2933MT/s - PC4-23400 Voltage 1
2xM471B1G73QH0-YK0 Capacity 16GB (2x 8GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 512M x8 Pieces in Kit 1 Compatibility
Hynix 8GB (1x 8GB) DDR4-2400 PC4-19200 1.2V DR x8 ECC Registered 288-pin RDIMM RAM Module Form Factor_260-pin SODIMM but the effective rate isProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2400 MT s 288 pin RDIMM RAM module from Hynix . This Dual rank, x8 configuration RAM module is for use in DDR4 compatible systems and operates at 2400 MT s with an overall transfer rate of PC4 19200. This RAM module also operates at a standard voltage of 1. 2V and is designed
