Hynix 16GB (1x 16GB) DDR4-2133 PC4-17000 1.2V DR x4 ECC Registered 288-pin RDIMM RAM Module Type_DDR4 CT4G3ERSDD8186D Capacity 4GB (1x 4GB)

CT4G3ERSDD8186D Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 256Mx8 Pieces in Kit 1 Compatibility

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 512M x8 Pieces in Kit 1 Compatibility

This 2GB (2x 1GB) DDR2 667 MT/s RAM kit from Samsung is for use in DDR2 compatible systems and operates at 667 MT/s with an overall transfer rate of PC2-5300

5V Technology DDR3L Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration 36-chip 512Mx4 Pieces in Kit 1

Hynix 16GB (1x 16GB) DDR4-2133 PC4-17000 1.2V DR x4 ECC Registered 288-pin RDIMM RAM Module Type_DDR4 CT4G3ERSDD8186D Capacity 4GB (1x 4GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2133 MT s 288 pin RDIMM RAM module from Hynix . This Dual rank, x4 configuration RAM module is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM module also operates at a standard voltage of 1. 2V and is designed