Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm 5V Technology DDR3 Error Correction

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM CAS Latency CL9 Pieces in Kit 1 Compatibility

M393B1K70QB0-CK0 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Dual Voltage for Newer and Older systems

and don't be surprised if you can actually upgrade your Mac with double the amount of RAM that was originally specified by Apple

2xHMA41GR7BJR4N-UH Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Classification_ram-ddr3l-1066-sodimm-2gb-1x-sr-fm 5V Technology DDR3 Error CorrectionProduct Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.