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Micron 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr2-800-sodimm-4gb-2x-dr-fm HMT41GU6MFR8C-PBN0 Capacity 8GB (1x 8GB)

SKU 51020295815
4.5
EUR97.99 EUR147.99

Pay in 4 interest-free payments of $24.50 Learn more

Shipping Estimate
USA
  • USA
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Ships within 48 hours · Estimated delivery Aug 21 - Aug 26

Description

HMT41GU6MFR8C-PBN0 Capacity 8GB (1x 8GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

8V Technology DDR2 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Pieces in Kit 2 Compatibility

This 16GB (1x 16GB) DDR4 2400 MT/s RAM module from Samsung is for use in DDR4 compatible systems and operates at 2400 MT/s with an overall transfer rate of PC4-19200

M393B1K73DH0-YF8 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

2xM470T2953EZ3-CE6 Capacity 2GB (2x 1GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

Micron 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Classification_ram-ddr2-800-sodimm-4gb-2x-dr-fm HMT41GU6MFR8C-PBN0 Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Micron . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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