Hynix 1GB (1x 1GB) DDR2-667 PC2-5300 1.8V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-lrdimm-64gb-1x-qr 5V Technology DDR Error Correction

5V Technology DDR Error Correction Non-ECC Signal Processing Unbuffered Form Factor 200-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

2xHMA41GR7MFR8N-TF Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

RAM1832 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

HMT351U6EFR8C-PB Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2666 MT/s 288-pin RDIMM RAM module from Samsung

Hynix 1GB (1x 1GB) DDR2-667 PC2-5300 1.8V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr4-2666-lrdimm-64gb-1x-qr 5V Technology DDR Error CorrectionProduct Overview This 1GB (1x 1GB) DDR2 667 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 667 MT s with an overall transfer rate of PC2 5300. This RAM module also operates at a standard voltage of 1. 8V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.