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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 128M x8 Pieces in Kit 2 Compatibility
HMT351U7BFR8C-H9T0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
This 4GB (2x 2GB) DDR3 1333 MT/s Single rank
2V Technology DDR4 Error Correction ECC Signal Processing Load Reduced Form Factor 288-pin LRDIMM Ranks Quad rank CAS Latency CL17 Configuration x4 Pieces in Kit 1 Compatibility
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL9 Configuration 16-chip 1024M x8 Pieces in Kit 1 Compatibility
Samsung 8GB (1x 8GB) CL9 DDR3-1333 PC3-10600 1.5V ECC Registered 240-pin RDIMM RAM Module Brand_Nanya 5V Technology DDR3 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR3 1333 MT s 240 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed
