Samsung 4GB (1x 4GB) CL17 DDR4-2400 PC4-19200 1.2V ECC Registered 288-pin RDIMM RAM Module Model_Mac_Book_Pro_7_1 M393B1K70CH0-YH9Q5 Capacity 8GB (1x 8GB)

M393B1K70CH0-YH9Q5 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

The double-safe place for all your media and files

HMT451U6BFR8A-PBN0 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1

5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 128M x8 Pieces in Kit 2 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2133 MT/s 288-pin EUDIMM RAM kit from Micron

Samsung 4GB (1x 4GB) CL17 DDR4-2400 PC4-19200 1.2V ECC Registered 288-pin RDIMM RAM Module Model_Mac_Book_Pro_7_1 M393B1K70CH0-YH9Q5 Capacity 8GB (1x 8GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR4 2400 MT s 288 pin RDIMM RAM module from Samsung . This RAM module is for use in DDR4 compatible systems and operates at 2400 MT s with an overall transfer rate of PC4 19200. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL17, and is designed