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Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr2-533-sodimm-1gb-2x-dr-fm 128GB: 600MB/s

SKU 59319498327
4.5
USD46.99 USD85.99

Pay in 4 interest-free payments of $11.75 Learn more

Shipping Estimate
USA
  • USA
  • CAN

Ships within 48 hours · Estimated delivery Aug 20 - Aug 25

Description

128GB: 600MB/s

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M393B1K70QB0-CMA Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1

There is no way to specify/order this data interface with Apple

5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

Hynix 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V 204-pin SODIMM RAM Module Classification_ram-ddr2-533-sodimm-1gb-2x-dr-fm 128GB: 600MB/sProduct Overview This 4GB (1x 4GB) DDR3 1333 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
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