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Ships within 48 hours · Estimated delivery Aug 13 - Aug 18
Pay in 4 interest-free payments of $9.75 Learn more
Ships within 48 hours · Estimated delivery Aug 13 - Aug 18
5V Technology DDR3L Error Correction ECC Signal Processing Load Reduced Form Factor 240-pin LRDIMM Ranks Quad rank Configuration x4 Pieces in Kit 1 Compatibility
M378T5663EH3-CF7 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR2-400 - 400MT/s - PC2-3200 Voltage 1
you can save 25% or more on your RAM costs – and maintain your OEM server warranties
M471B5173DB0-YK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 288-pin EUDIMM Ranks Dual rank Configuration 18 Chip 512M x8 Pieces in Kit 1 Compatibility
Hynix 2GB (1x 2GB) DDR3-1066 PC3-8500 1.5V DR x8 204-pin SODIMM RAM Module Classification_ram-ddr2-800-eudimm-2gb-1x-dr 5V Technology DDR3L Error CorrectionProduct Overview This 2GB (1x 2GB) DDR3 1066 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1066 MT s with an overall transfer rate of PC3 8500. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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