Samsung 512MB (1x 512MB) CL2.5 DDR-266 PC2100 2.5V DR x8 200-pin SODIMM RAM Module Classification_ram-ddr3l-1600-eudimm-16gb-2x-dr-fm 2xCT51264AA667 Capacity 8GB (2x 4GB)

2xCT51264AA667 Capacity 8GB (2x 4GB) Brand Crucial Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

2V Technology DDR4 Error Correction ECC Signal Processing Unbuffered Form Factor 260-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 2 Compatibility

This 16GB (1x 16GB) DDR3L 1600 MT/s Dual rank

2xM393A4K40BB0-CPB Capacity 64GB (2x 32GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

HMT82GV7DMR4C-RD Capacity 16GB (1x 16GB) Brand Hynix Speed DDR3-1866 - 1866MT/s - PC3-14900 Voltage 1

Samsung 512MB (1x 512MB) CL2.5 DDR-266 PC2100 2.5V DR x8 200-pin SODIMM RAM Module Classification_ram-ddr3l-1600-eudimm-16gb-2x-dr-fm 2xCT51264AA667 Capacity 8GB (2x 4GB)Product Overview This 512MB (1x 512MB) DDR 266 MT s Dual rank, x8 configuration RAM module from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM module also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical