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Samsung 4GB (2x 2GB) DDR-333 PC2700 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Kit Brand_Micron 8V Technology DDR2 Error Correction

SKU 63118058389
4.3
USD83.98 USD116.98

Pay in 4 interest-free payments of $21.00 Learn more

Shipping Estimate
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  • USA
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Ships within 48 hours · Estimated delivery Aug 20 - Aug 25

Description

8V Technology DDR2 Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Dual rank Configuration 18-chip 128M x8 Pieces in Kit 2 Compatibility

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Single rank Configuration x8 Pieces in Kit 2 Compatibility

HYMP112S64CP6-S6 Capacity 1GB (1x 1GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

CT8G4RFD8266 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (2x 8GB) DDR4 2400 MT/s 288-pin RDIMM RAM kit from Crucial

Samsung 4GB (2x 2GB) DDR-333 PC2700 2.5V DR x4 ECC Registered 184-pin RDIMM RAM Kit Brand_Micron 8V Technology DDR2 Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (2x 2GB) DDR 333 MT s 184 pin RDIMM RAM kit from Samsung . This Dual rank, x4 configuration RAM kit is for use in DDR compatible systems and operates at 333 MT s with an overall transfer rate of PC2700. This RAM kit also operates at a standard voltage of 2. 5V and is designed to allow you to

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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