Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Signal Processing_Fully Buffered 8V Technology DDR2 Error Correction

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility

CT8G4RFS8266 Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2666 - 2666MT/s - PC4-21300 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3L 1866 MT/s 240-pin RDIMM RAM module from Crucial

5V Technology DDR3L Error Correction ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility

M378B5173QH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Hynix 4GB (1x 4GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Module Signal Processing_Fully Buffered 8V Technology DDR2 Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.