Hynix 16GB (2x 8GB) DDR4-2133 PC4-17000 1.2V DR x8 288-pin UDIMM RAM Kit Model_Mac_Book_Pro_5_4 2xEBJ21UE8BDF0-DJ-F Capacity 4GB (2x 2GB)

2xEBJ21UE8BDF0-DJ-F Capacity 4GB (2x 2GB) Brand Elpida Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR 333 MT/s 184-pin RDIMM RAM module from Samsung

M393B5170FH0-CH9Q5 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

M395T5160QZ4-CE66 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1

8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility

Hynix 16GB (2x 8GB) DDR4-2133 PC4-17000 1.2V DR x8 288-pin UDIMM RAM Kit Model_Mac_Book_Pro_5_4 2xEBJ21UE8BDF0-DJ-F Capacity 4GB (2x 2GB)Product Overview This 16GB (2x 8GB) DDR4 2133 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM kit also operates at a standard voltage of 1. 2V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.