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2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 288-pin UDIMM Ranks Dual rank Configuration x8 Pieces in Kit 2
CT204864BF160B
HMA41GU6AFR8N-TF Capacity 8GB (1x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
CT51272BF160B Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Registered Form Factor 288-pin RDIMM Ranks Dual rank Configuration 36-chip 2048Mx4 Pieces in Kit 2 Compatibility
Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Speed_DDR-266 2V Technology DDR4 Error CorrectionProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
