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Ships within 48 hours · Estimated delivery Aug 21 - Aug 26
2xM378T5663EH3-CF7 Capacity 4GB (2x 2GB) Brand Samsung Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1
5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 128Mx8 Pieces in Kit 2 Compatibility
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 1024M x8 Pieces in Kit 2 Compatibility
2xM393A2K40BB1-CRC Capacity 32GB (2x 16GB) Brand Samsung Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
2xM368L3223DTL-CB0 Capacity 512MB (2x 256MB) Brand Samsung Speed DDR-266 - 266MT/s - PC2100 Voltage 2
Hynix 32GB (2x 16GB) DDR4-2133 PC4-17000 1.2V DR x4 ECC Registered 288-pin RDIMM RAM Kit Brand_Upgradeable 2xM378T5663EH3-CF7 Capacity 4GB (2x 2GB)Product Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (2x 16GB) DDR4 2133 MT s 288 pin RDIMM RAM kit from Hynix . This Dual rank, x4 configuration RAM kit is for use in DDR4 compatible systems and operates at 2133 MT s with an overall transfer rate of PC4 17000. This RAM kit also operates at a standard voltage of 1. 2V and is designed to allow
