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CT8G4RFS824A Capacity 8GB (1x 8GB) Brand Crucial Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1
2xCT51264BF186DJ Capacity 8GB (2x 4GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
M470T2953CZ3-CE6 Capacity 1GB (1x 1GB) Brand Samsung Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
2V Technology DDR4 Error Correction ECC Signal Processing Load Reduced Form Factor 288-pin LRDIMM Ranks Quad rank CAS Latency CL17 Configuration x4 Pieces in Kit 1 Compatibility
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR3L 1600 MT/s 240-pin RDIMM RAM module from Samsung
Hynix 2GB (1x 2GB) DDR3-1333 PC3-10600 1.5V DR 240-pin UDIMM RAM Module Brand_Upgradeable CT8G4RFS824A Capacity 8GB (1x 8GB)Product Overview This 2GB (1x 2GB) DDR3 1333 MT s Dual rank RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No. HMT125U6TFR8C H9 Capacity
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