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Micron 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Model_iMAC_13_1 8V with a CAS Latency

SKU 85388738419
4.3
USD52.99 USD76.99

Pay in 4 interest-free payments of $13.25 Learn more

Shipping Estimate
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Ships within 48 hours · Estimated delivery Aug 17 - Aug 22

Description

8V with a CAS Latency of CL3

M393B2G70AH0-YH9 Capacity 16GB (1x 16GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

x16 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 800 MT/s with an overall transfer rate of PC2-6400

This 2GB (2x 1GB) DDR 333 MT/s Dual rank

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 2GB (1x 2GB) DDR3 1066 MT/s 240-pin EUDIMM RAM module from Micron

Micron 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Model_iMAC_13_1 8V with a CAS LatencyProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Micron is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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