Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V SR x8 240-pin UDIMM RAM Module Classification_ram-ddr2-800-eudimm-2gb-2x-sr 2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB)

2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB) Brand Hynix Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1333 MT/s 240-pin RDIMM RAM module from Samsung

CT2K16G4RFD424A Capacity 32GB (2x 16GB) Brand Crucial Speed DDR4-2400 - 2400MT/s - PC4-19200 Voltage 1

M393B1K70CH0-CH9 Capacity 8GB (1x 8GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

This 2GB (1x 2GB) DDR3 1333 MT/s Dual rank RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT/s with an overall transfer rate of PC3-10600

Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V SR x8 240-pin UDIMM RAM Module Classification_ram-ddr2-800-eudimm-2gb-2x-sr 2xHMA41GR7MFR4N-TF Capacity 16GB (2x 8GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s Single rank, x8 configuration RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical